AREA 1
Tu-P1 FIRST-PRINCIPLES STUDY OF CRYSTAL POLYMORPHISM AND OPTICAL PROPERTIES OF ORDERED VACANCY III_2VI_3 AND II-III_2VI_4 SEMICONDUCTORS
M. Ishikawa, T. Nakayama and M. Murayama
Department of Physics, Chiba University, 1--33 Yayoi, Inage, Chiba 263-8522, Japan
Tu-P2 Norm-conserving pseudopotentials for semiconductors in the exact exchange Kohn-Sham formalism
M. Moukara, M. St{a}dele, J. A. Majewski, and P. Vogl, A. Gorling
Physik-Department and Walter Schottky Institut, Technische Universitat Munchen, AmCoulombwall, D-85748 Garching, Germany
Tu-P3 Ab Initio k dot p Matrix Elements
R. Winkler
Institut fur Technische Physik III, Universitat Erlangen-Nurnberg Staudtstr.7, D-91058 Erlangen, Germany
Tu-P4 THEORETICAL STUDY OF THE ``CINNABAR'' PHASE IN III-V COMPOUNDS
A.Mujica, A. Munoz, S. Radescu, and R.J. Needs
Departamento de Fisica Fundamental y Experimental, Universidad de La Laguna, La Laguna E-38205, Tenerife, Spain
Tu-P5 HIGH MAGNETIC FIELD SHUBNIKOV-DE HAAS EFFECT AND CYCLOTRON RESONANCE IN Bi_{2-x}Sb_{x}Se_{3}
V.A.Kulbachinskii, N. Miura, H. Nakagawa, H. Arimoto, T. Ikaida, P. Lostak and C. Drashar
Low Temperature Physics Department, Moscow State University, 119899, Moscow, Russia
Tu-P6 THE ROLE OF D-STATES
W. A. Harrison and Galen K. Straub
Stanford University and Los Alamos National Laboratories U.S.A.
Tu-P7 AB INITIO CALCULATION OF RAMAN INTENSITIES IN SEMICONDUCTOR ALLOYS
B. Steininger, Pasquale Pavone, and Dieter Strauch
Institut fur Theoretische Physik, Universitat Regensburg, D-93040 Regensburg, Germany
Tu-P8 SINGLE OPTICAL PHONON EXCITATION BY INFRARED PHOTONS IN SI:B BLOCKED-IMPURITY-BAND STRUCTURES
L. Asadauskas1,2, R. Brazis1, J. Leotin2
Semiconducor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania
Tu-P9 THE ELASTIC CONSTANTS, THE LATTICE PARAMETERS AND THE COMPOSITION OF AlGaAs EPITAXIAL LAYERS
S. Gehrsitz, H. Sigg, N. Herres, F.K. Reinhart
Paul Scherrer Institute, CH-5232 Villigen--PSI, Switzerland
Tu-P10 FIR AND RAMAN SPECTROSCOPY STUDY OF PHONONS IN CdS-SiO_2 COMPOSITES
M.I.Vasilevskiy, A. G. Rolo, M. J. M. Gomes, O.V.Vikhrova and A.S.Savinov
Departamento de Fisica , Universidade do Minho, Largo do Paco, 4709 Braga Codex, Portugal
Tu-P11 THE BOLOMETRIC EFFECT IN THE FAR INFRARED PHOTOCONDUCTIVITY OF LAYERED SEMICONDUCTOR STRUCTURES
M.L. Sadowski, M. Grynberg and G. Martinez
Grenoble High Magnetic Field Laboratory, MPI-FKF/CNRS, 38042 Grenoble, FRANCE
Tu-P12 AB-INITIO STUDY OF TRENDS IN THE LATTICE DYNAMICS OF III-V SEMICONDUCTORS
T. Pletl, P. Pavone, M. Sinzinger, and D. Strauch
Institut fur Theoretische Physik, Universitat Regensburg, D-93040 Regensburg, Germany
Tu-P13 Ab initio calculation of excitonic effects in the optical spectra of semiconductors and insulators
Stefan Albrecht and Lucia Reining, Rodolfo Del Sole and Giovanni Onida
Laboratoire des Solides Irradies URA 1380 CNRS -- CEA/CEREM, Ecole Polytechnique, F-91128 Palaiseau, France
Tu-P14 RAMAN STUDY OF ISOTOPE EFFECTS ON THE PHONON DISPERSION IN SiC
F. Widulle, T. Ruf, O. Buresch, A. Debernardi, and M. Cardona
Max-Planck-Institut fur Festkorperforschung, D-70569 Stuttgart, Germany
Tu-P15 OBSERVATION OF `FORBIDDEN' SPIN-FLIP TRANSITIONS IN SEMI-MAGNETIC NARROW-GAP Hg$_{0.78}$Cd$_{0.21}$Mn$_{0.006}$Te
Yu.I. Mazur, G.G. Tarasov, E.V. Kuzmenko, W. Hoerstel, W. Kraak, W. T. Masselink, J.W. Tomm
Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 45, 252650 Kiev, Ukraine
Tu-P16 SPONTANEOUS SPLITTING OF FERROMAGNETIC (Ga,Mn)As VALENCE BAND OBSERVED BY RESONANT TUNNELING SPECTROSCOPY
N. Akiba, F. Matsukura, Y. Ohno, A. Shen, K. Ohtani, and H. Ohno
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
Tu-P17 HOLE MEDIATED MAGNETIC INTERACTION IN (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As TRI-LAYER STRUCTURES
F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye, H. Ohno
Res. Inst. of. Elec. Commun., Tohoku University, Sendai 980-8577, Japan
Tu-P18 MECHANISM AND DYNAMICS OF MAGNETIC POLARON FORMATION IN DILUTED MAGNETIC SEMICONDUCTORS
Yuri G. Rubo
Centro de Investigacion en Energia, UNAM, Temixco, Mor. 62580, Mexico
Tu-P19 MAGNETO-SPATIAL DISPERSION EFFECT IN MAGNETIC SEMICONDUCTORS
B. B. Krichevtsov, R. V. Pisarev, A. A. Rjevski, V. N. Gridnev, H. Weber
Ioffe Physico-Technical Institute of RAS, St. Petersburg 194021, Russia
Tu-P20 FERRONS IN AN ANTIFERROMAGNETIC SIZE-QUANTIZED SEMICONDUCTOR FILM
A.A.Kirakosian, Sh.G.Gasparian
Yerevan State University, 375049 Yerevan, Armenia
Tu-P21 On Transport Properties of Exciton-Phonon Condensate in Cu_2O
D. Roubtsov, Y. Lepine
Groupe de Recherche en Physique et Technologie des Couches Minces Physics Department, Universite de Montreal Montreal, Quebec, Canada
Tu-P22 NEAR BANDEDGE AND DEEP CENTER PHOTOLUMINESCENCE IN SiGe BULK CRYSTALS
M. Franz and K. Pressel
Institute for Semiconductor Physics, Walter-Korsing-Str. 2, 15230 Frankfurt (Oder), Germany
Tu-P23 Manifestation of exciton Bose condensation in induced two-phonon emission and Raman scattering
Yu.E.Lozovik, A.V.Poushnov
Institute of Spectroscopy, Academy of Sciences, 142092, Troitsk, Moscow region, Russia
AREA 2
Tu-P24 MECHANISMS OF SELF-ORDERING OF NANOSTRUCTURES ON CORRUGATED SUBSTRATES
G. Biasiol, F. Lelarge, K. Leifer and E. Kapon
Department of Physics, Swiss Federal Institute of Technology - EPFL, 1015 Lausanne, Switzerland.
Tu-P25 Reflection-Anisotropy Spectroscopy of Growing and As-Grown MBE InP(001) Surfaces
K.B.Ozanyan, P.J.Parbrook, M.Hopkinson and C.R.Whitehouse
Interdisciplinary Research Centre for Semiconductor Materials EPSRC Central Facility for III-V Semiconductors Department of Electronic and Electrical Engineering, University of Sheffield Mappin Street, Sheffield S1 3JD, UK
Tu-P27 THEORETICAL INVESTIGATION OF THE INTERACTION BETWEEN Si TIP AND GaAs(110) SURFACE IN NONCONTACT ATOMIC FORCE MICROSCOPY
S.H. Ke, T. Uda and K. Terakura
Joint Research Center for Atom Technology (JRCAT), Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan.
Tu-P28 Si-Ge HETEROEPITAXY AT HIGH GROWTH RATES BY A NEW PLASMA ENHANCED CVD PROCESS.
Carsten Rosenblad, Thomas Graf, Julian Stangl, Christian Penn, Gunther Bauer, Hans von Kanel
Laboratorium fur Festkorperphysik, ETH-Zurich, CH-8093 Zurich, Switzerland
Tu-P29 SELF ORGANIZED MBE-GROWTH OF HgSe:Fe QUANTUM WIRES ON PATTERNED GaSb-SUBSTRATES
H. Wiss mann, T. Tran-Anh, A. Kirste, S. Rogaschewski and M. v. Ortenberg
Institut fur Physik, Humboldt-Universitat zu Berlin, Invalidenstrass e 110 D-10115 Berlin, Germany
Tu-P30 MODULATION-DOPED InxGa1-xAs/In.52Al.48As PSEUDOMORPHIC STRUCTURES GROWN BY LP-MOVPE
Patricia L. Souza, Boris Yavich, Andre B. Henriques, Ricardo G. Pereira Luiz D. Goncalves
Centro de Estudos em Telecomunicaes, Pontifcia Universidade Catlica do Rio de Janeiro, Rua Marqus de So Vicente 225, 22453-900, Rio de Janeiro Brasil
Tu-P31 Cs adsorption on InAs(110): atomic structure and electronic properties
Maria Grazia Betti, V. Corradini, C. Mariani, Antonella Falasca, M. Polentarutti, S. Modesti
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Universita di Modena, Via G. Campi 213/A, I-41100 Modena, Italy
Tu-P32 A Comparative Study of Interdiffusion in InGaAs/InP MQW Structures using XSTM, XSTEM, and Photoluminescence Measurements
P.G. Piva, H. Chen, R.D. Goldberg, R.M. Feenstra, G.C. Aers, P.J. Poole, G.C. Weatherly, D.W. McComb, I.V. Mitchell, S. Charbonneau
Department of Physics, University of Western Ontario, London, Ontario, N6A 3K7, Canada
Tu-P33 STM STUDY ON THE STEP STRUCTURE OF COMPOSITIONALLY GRADED Si_{1-x}Ge_{x}/Si(001) BUFFERS
B. Vogeli, Matthias Kummer, and Hans von Kanel
Laboratory for Solid State Physics, HPF F15, 8093 Zurich, Switzerland
Tu-P34 SCHOTTKY-BARRIER LOWERING AT DEFECTS STUDIED BY BEEM
M. Klemenc, T. Meyer, C. Rosenblad and H. von Kanel
Solid State Physics Laboratory, ETH Honggerberg, 8093 Zurich, Switzerland
Tu-P35 SURFACE MORPHOLOGY DEPENDENCE OF OPTICAL PROPERTIES OF MBE-GROWN CUBIC AND HEXAGONAL GaN
M. Godlewski, E.M. Goldys, T.L. Tansley, M.R. Phillips, R. Langer and A. Barski
Inst. of Phys., Polish Acad. of Sci., 02-668 Warsaw, Al. Lotnikow 32/46, Poland
AREA 3
Tu-P36 Absence of localization in intentionally disordered superlattices with short-range spatial correlation.
V. Bellani, E. Diez, L. Toni, L. Tarricone, R. Hey, F. Dominguez-Adame and R. Gomez-Alcala
INFM-Dpto. di Fisica A. Volta, Universita di Pavia, I-27100 Pavia, Italy
Tu-P37 ON THE EXCITON SPIN RELAXATION IN QUANTUM WELLS WITH ALLOY DISORDER
H. Nickolaus, H. - J. Wunsche and F. Henneberger
Institut fur Physik, Humboldt-Universitat zu Berlin, Invalidenstr. 110, D-10115 Berlin, Germany
Tu-P38 The Influence of an Externally Applied Electric Field on Minibands in The Energy Continuum of Multi Quantum Well Superlattices.
J.O. Schlesinger, M. Gerling, D. Gershoni, E. Ehrenfreund, and D. Ritter.
Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Tu-P39 Two Color Picosecond PL Studies of Anti-Stokes PL in GaAs/AlGaAs Asymmetric Double Quantum Wells: A direct evidence for the two step absorption
S. C. Hohng, D. S. Kim, D. W. Khang, W. S. Kim and J. C. Woo
Department of Physics, Seoul National University, Seoul 151-742, Korea
Tu-P40 SPECTRAL SIGNATURE OF BIEXCITON BEATS IN FOUR-WAVE-MIXING EXPERIMENTS
B. Haase, U. Neukirch, J. Gutowski, G. Bartels, A. Stahl, V.M. Axt, J. Nurnberger and W. Faschinger
Institut fur Festkorperphysik, Universitat Bremen, D-28334 Bremen, Germany
Tu-P41 GIANT BLUE SHIFT OF PHOTOLUMINESCENCE IN STRONGLY EXCITED TYPE-II ZnSe/BeTe SUPERLATTICES
I.I.Tartakovskii, A.A.Maksimov, S.V.Zaitsev, V.D.Kulakovskii, N.A.Gippius, M.Th.Litz, F.Fisher, A.Waag, D.R.Yakovlev, W.Ossau and G.Landwehr
Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia
Tu-P42 TEMPERATURE DEPENDENCE OF CARRIER RECOMBINATION AND SPIN-FLIP PROCESSES IN p-DOPED GaAs QUANTUM WELLS
E. Perez, L. Vina, M. Potemski and Ploog
Depto. Fisica de Materiales, UAM, E-28049, Madrid, Spain
Tu-P43 Phonon Decay and Its Impact on Carrier Relaxation in Semiconductor Quantum Dots
Xin-Qi Li, Hajime Nakayama and Yasuhiko Arakawa
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan
Tu-P44 EXCITON SPIN RELAXATION IN CdTe/(Cd,Mn)Te SUPERLATTICE
M. G. Tyazhlov, footnote, M. D. Martin, L. Vina and L. L. Chang
Autonoma Universitad, Madrid, Spain
Tu-P45 HIGH MOBILITY 2DEG HEATED BY MICROWAVE AND OPTICAL RADIATION
B. M. Ashkinadze, A. Nazimov, E. Cohen, Arza Ron and L. Pfeiffer
Solid State Institute, Technion-Israel institute of Technology, Haifa 32000, Israel
Tu-P46 EMISSION AND ABSORPTION OF INFRARED RADIATION BY HOT ELECTRONS IN COUPLED QUANTUM WELLS
L.E.Vorobjev, D.A.Firsov, V.A.Shalygin, I.E.Titkov, V.N.Tulupenko, E.Towe and V.L.Zerova
St.Petersburg State Technical University, St.Petersburg 195251, Russia
Tu-P47 DEPHASING OF QUASI-2D BIEXCITONS
W. Langbein and J. M. Hvam
Mikroelektronik Centret, DTU Bldg. 345 east, DK-2800 Lyngby, Denmark
Tu-P48 LOCAL FIELD EFFECT ON QUASICONTINUM RESONANCES AND BRAGG CONFINED CONTINUM ELECTRONIC STATES
M. Levy, R. Kapon, A. Sa'ar, R. Beserman and R. Planel
Solid State Institute and Physics Department, Technion, Israel Institute of Technology, Haifa 32000, Israel
Tu-P49 VOLTAGE CONTROLLED SHARP LINE ELECTROLUMINESCENCE IN GaAs-AlGaAs RESONANT TUNNELING STRUCTURES
G A Roberts, J J Finley, M S Skolnick, J W Cockburn, L Eaves, M Henini, I A Larkin and G. Hill
Department of Physics, University of Sheffield, Sheffield, S3 7RH, UK
Tu-P50 IN-PLANE TRANSPORT OF EXCITONIC POLARITONS IN HETEROSTRUCTURES
U. Neukirch, G. Bley, J. Gutowski, H. Wenisch, and D. Hommel
Institute of Solid State Physics, University of Bremen, P.O. Box 330 440, D-28334 Bremen, Germany
Tu-P51 $\mu$-PL AS A PROBE FOR A LOCAL RECOMBINATION MECHANISM IN TYPE-II GAAS/ALAS SUPERLATTICES
D. Luer, A. Oehler and H. Kalt
Institut fur Angewandte Physik, Universitat Karlsruhe, D-76128, Karlsruhe, Germany
Tu-P52 TWO-DIMENSIONAL EXCITON/FREE-CARRIER PLASMA: BOUND STATES VERSUS SCATTERING
M. E. Portnoi and I. Galbraith
Physics Department, Heriot-Watt University, Edinburgh EH14 4AS, UK
Tu-P53 EXCITED STATE SPECTROSCOPY IN DOPED GaAs QUANTUM WELLS
A.A. Busch, J.M. Watson, P. Paddon, Z. Wasilewski and J.F. Young
Department of Physics & Astronomy, University of British Columbia, Vancouver, BC, Canada
Tu-P54 BINDING ENERGY OF BIEXCITONS AND CHARGED EXCITONS IN QUANTUM WELLS: A DIFFUSION MONTE CARLO STUDY
Takuma Tsuchiya and Shin'ichi Katayama
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Tu-P55 MAGNETIC FIELD INDUCED CAVITY MODE LINEWIDTH REDUCTION IN A GaAs/AlAs MICROCAVITY CONTAINING A QUANTUM WELL
R. Harel, E. Cohen, Arza. Ron, E. Linder and L. N. Pfeiffer.
Solid State Institute, Technion - Israel Institute of Technology, Haifa 32000, Israel
Tu-P56 EXCITON-PHOTON COUPLING IN PHOTONIC WIRES
A.I.Tartakovskii, V.D.Kulakovskii, A.Forchel, J.P.Reithmaier
Institute of Solid State Physics, RAS, 142432 Chernogolovka, Moscow reg, Russia
Tu-P57 MECHANISM OF THE UNUSUAL PHOTOLUMINESCENCE OF GaP/AlP SHORT PERIOD SUPERLATTICES IN A STRONG MAGNETIC FIELD
Hiroshi Kamimura, Yoshinori Kobayashi and Kazuma Kouzu
Institute of Physics, Graduate School of Science, Science University of Tokyo, 1-3 Kagurazaka, Shinjuku-ku, Tokyo, Japan
Tu-P58 THE EFFECT OF THE MOBILE VALENCE HOLE ON THE OPTICAL ABSORPTION OF QUANTUM WELLS IN THE PRESENCE OF A TWO-DIMENSIONAL ELECTRON GAS
G. A. Narvaez, J. A. Brum and P. Hawrylak
Instituto de Fisica ``Gleb Wataghin'', Universidade Estadual de Campinas, UNICAMP, 13083-970, Campinas, Sao Paulo, Brasil
Tu-P59 GIANT VACUUM-FIELD RABI-SPLITTING IN GaN/A1GaN MICROCAVITIES
Alexey Kavokin, Bemard Gil
Dipartimento di Ingeneria Elettronica, Universita'di Roma II, via Tor Vergata, s. n. c., 00133, Roma, Italy
Tu-P60 RECOMBINATION TRANSITIONS IN ZnSe/ZnMgSSe QUANTUM WELL STRUCTURES
V.Yu .Ivanov, M. Godlewski, J.P. Bergman, B. Monemar, M. Behringer and D. Hommel
Inst. of Physics, Polish Acad. Sci., 02-668 Warsaw, Al. Lotnikow 32/46, Poland
Tu-P61 New kind of gap-less state in InAs/GaSb coupled quantum wells.
S. de-Leon, L. D. Shvartsman, B. Laikhtman.
Racah Institute of Physics, Hebrew University, Jerusalem 91904, Israel
Tu-P62 SUPERLATTICES IN THE PRESENCE OF EXTERNAL AC ELECTRIC FIELDS: AC STARK SHIFTS vs DYNAMIC LOCALIZATION
P. H. Rivera and P. A. Schulz
Instituto de Fisica Gleb Wathagin, Universidade Estadual de Campinas, C. P. 6165, Campinas, SP 13083--970, Brazil
Tu-P63 II-VI DMS QUANTUM WELLS: THE CASE OF Cd_1-x Mn_x Te/CdTe
M. A. Boselli, I. C. da Cunha Lima and A. Ghazali
Instituto de Fisica, Universidade do Estado do Rio de Janeiro, 20550-013 Rio de Janeiro, R.J., Brazil
Tu-P64 ANALYTICAL ENVELOPE-FUNCTION THEORY OF INTERFACE BAND MIXING
Bradley A. Foreman and M. G. Burt
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
Tu-P65 EXCHANGE ENERGY OF A MULTICOMPONENT HOLE GAS
L. M. R. Scolfaro, D. Beliaev, J. R. Leite, R. Enderlein, and G. M. Sipahi
Instituto de Fisica, Universidade de Sao Paulo, CP 66318, CEP 05315-970 Sao Paulo, SP, Brazil
Tu-P66 OPTICAL SIGNATURES OF INTERFACE ASYMMETRY IN GaAs/AlAs QUANTUM WELLS
Belita Koiller, T.G. Dargam, R.B. Capaz, H. Chacham
Instituto de Fisica, Universidade Federal do Rio de Janeiro, Brazil
Tu-P67 Exchange and correlation in Be-delta-doped GaAs/AlGaAs quantum wells
M. Kemerink, P.M.M. Thomassen, P.M. Koenraad, P.A. Bobbert, J.C.M. Henning and J.H. Wolter
COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands
Tu-P68 ELECTRONIC PROPERTIES OF STRAINED GaAs/GaP QUANTUM WELLS
G. Armelles, J. A. Prieto, J.P. Silveira and F. Briones, M.-E. Pistol, P. Castrillo and L. Samuelson
Instituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Spain
Tu-P69 SPIN SPLITTING IN STRAINED P-TYPE QUANTUM WELLS WITH AND WITHOUT AN APPLIED MAGNETIC FIELD
O.Mauritz
Istituto Nazionale per la Fisica della Materia (INFM) e Dipartimento di Fisica, Universita di Modena, IT-41100 Modena, Italy. and U. Ekenberg Theoretical Physics, Royal Institute of Technology, SE-100 44 Stockholm, Sweden
Tu-P70 OBSERVATION OF A DIMENSIONALITY CHANGE IN THE ELECTROABSORPTION OF PARABOLIC QUANTUM WELLS
W. Geisselbrecht, U. Klutz, U. Sahr, U. Pfeiffer, G.H. Dohler, K. Maranowski, K. Campman, A.C. Gossard
Institut fur Technische Physik, Universitat Erlangen-Nurnberg, Germany
Tu-P71 VALENCE BAND MIXING and 1D-MINIBAND FORMATION in V-GROOVE QUANTUM WIRE SUPERLATTICES
Y. Ducommun, M.-A. Dupertuis, E. Martinet, H. Weman, G. Biasiol, A. Gustafsson and E. Kapon
Department of Physics, Swiss Federal Institute of Technology-EPFL, 1015 Lausanne, Switzerland
Tu-P72 DEPENDENCE OF THE TRANSITION STRENGTH ON THE PARITY OF THE NUMBER OF AlAs MONOLAYERS
D. Martins, C. Gourdon, P. Lavallard, R. Planel
Groupe de Physique des Solides - Universites Paris 6 et 7 - CNRS UMR 75-88 Tour 23 - 2, Place Jussieu - 752521 Paris cedex 05 - France
AREA 4
Tu-P73 Gamma-X TUNNELING IN GaAs/AlAs/GaAS HETEROSTRUCTURE
Yu. N. Khanin, E. E. Vdovin, K. S. Novoselov, Yu. V. Dubrovskii, P. Omling, S.-B. Carlsson, T. G. Andersson
Institute of Microelectronics Technology RAS. 142432, Chernogolovka, Moscow Region, Russia
Tu-P74 INTER-SUBBAND SCATTERING RATES, POPULATION INVERSION AND STIMULATED EMISSION OF THZ PLASMONS IN BOUNDED QUANTUM SYSTEMS
K. Kempa{a}, P. Bakshi{a}, C. Du{a}, A. Scorupsky{a}, E. Gornik{b}, G. Strasser{b}, K. Unterrainer{b}, and C. Rauch{b}
{a}Department of Physics, Boston College, Chestnut Hill, MA 02167, USA. {b}Institute for Solid State Electronics and Microstructure Center,TU Wien, Austria
Tu-P76 Magnetic Modulations of Transport and Optical Properties in Tunnel-Coupled Double Quantum Wells
S. K. Lyo, J. A. Simmons, D.Huang, and N. E. Harff
Sandia National Laboratories, USA
Tu-P77 SMALL POlARONS VARIABLE RANGE HOPPING IN QUASI-TWO DIMENSIONAL MATERIALS: APPLICATION TO PrBa(2)Cu(3-x)Ga(x)O(7-y)
M. Singh and R.B. Thompson
Department of Physics, University of Western Ontario, London, Canada
Tu-P79 MAGNETIC FIELD EFFECTS ON THE FLUCTUATIONS OF THE LOCAL DENSITY OF ELECTRON STATES IN A DISORDERED METAL
J.P.Holder, B.Jouault, A.K.Savchenko, V.I.Fal'ko, G.Faini, F.Laruelle, E.Bedel
Department of Physics, University of Exeter, Stocker Rd, Exeter, EX4 4QL, UK.
Tu-P81 CHAOS AND MAGNETOTRANSPORT IN MAGNETIC LATERAL SUPERLATTICES
R.Hennig, M.Suhrke, and U.R"ossler
Institut f"ur Theoretische Physik, Universit"at Regensburg, D-93040 Regensburg, Germany
Tu-P82 TWO-DIMENSIONAL HOPPING CONDUCTIVITY IN DELTA-DOPED GaAs/AlGaAs HETEROSTRUCTURE: CROSSOVER PHENOMENON AND EXPERIMENTAL EVIDENCE FOR ELECTRON-ELECTRON INTERACTION ASSISTED HOPPING
S. I. Khondaker, I. Shlimak, J. T. Nicholls, M. Pepper, D. A. Ritchie
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK,
Tu-P83 ANISOTROPIC AC PERMITTIVITY AND MAGNETO-OPTICAL PROPERTIES OF SEMICONDUCTING FILMS WITH A TWO CHARACTERISTIC LENGTH SCALES PERIODIC COLUMNAR HETEROSTRUCTURE
Yakov M. Strelniker and David J. Bergman
School of Physics and Astronomy, Raymond and Beverly Sackler, Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 69978, Israel
Tu-P84 MAGNETO-RESISTANCE OF FERROMAGNET/SEMICONDUCTOR/FERROMAGNET JUNCTION
S. Gardelis, C.G. Smith, C.H.W. Barnes, D.A. Ritchie and E.H. Linfield
Department of Physics, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom
Tu-P85 FREQUENCY-DEPENDENT MAGNETOTRANSPORT IN RECTANGULAR MAGNETIC ANTIDOT LATTICES
Esmael Badran and Sergio E. Ulloa
Department of Physics and Astronomy and Condensed Matter and Surface Sciences Program, Ohio University, Athens, Ohio 45701--2979, USA
Tu-P86 TUNNELING - ASSISTED LOCALIZED IMPURITY AUTOIONIZATION IN CdF2/CaF2:Eu SUPERLATTICES
N.S.Sokolov, S.V.Gastev, A.Yu.Khilko, S.M.Suturin and I.N.Yassievich; J.M.Langer, A. Kozanecki
Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Polytechnicheskaya st., 194021 St.Petersburg, Russia
Tu-P88 INHOMOGENEOUS ELECTRON SCATTERING AS A SIGNATURE OF THE TRANSITION FROM INSULATING TO METALLIC BEHAVIOUR
A. G. Davies, C. H. W. Barnes, K. R. Zolleis, M. Y. Simmons, and D. A. Ritchie.
Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, UK.
Tu-P89 STRUCTURE AND SUPERCONDUCTIVITY OF SEMICONDUCTING CHALCOGENIDE SUPERLATTICES.
N.Ya.Fogel, A.I.Erenburg, A.S.Pokhila, Yu.V.Bomze, A.Yu.Sipatov, A.I.Fedorenko, V.Langer, E.I.Buchstab.
B.Verkin Institute for Low Temperature Physics and Engineering, 47 Lenin Avenue, 310164 Kharkov, Ukraine
Tu-P90 ENERGY SPECTRUM AND RELAXATION MECHANISMS OF ELECTRONS IN LATERAL-SURFACE SUPERLATTICES GaAs(0.3,-Sn).
V.I. Kadushkin, E.V.Klyshevich, E.L. Shangina*, F.M. Tsahhaev, Yu.A.Kotova.
Ryazan State Pedagogical University, 390000, Ryazan, Russia.
Tu-P91 THE EXISTENCE OF THE WANNIER-STARK LOCALIZATION IN THE NATURAL SILICON CARBIDE SUPERLATTICE
Sankin V.I., Lepneva A.A., Maltsev A.A.
A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences 26, Politekhnicheskaya, St.Petersburg, 194021, Russia
Tu-P92 PHASE AND SPIN COHERENCY OF THE NONEQUILIBRIUM 2DEG ON THE HETEROINTERFACE
I. G. Savel'ev, D. D. Bykanov, A. M. Kreshchuk, S. V. Novikov, T. A. Polyanskaya
A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021 St.-Petersburg, Russia
Tu-P93 MAGNETIC FIELD INDUCED BRAGG REFLECTIONS IN ARTIFICIALLY LAYERED STRUCTURES
A.B.Henriques, P.M.Koenraad, L.C.D.Goncalves, P.L.Souza, B.Yavich
Instituto de Fisica da Universidade de Sao Paulo, Sao Paulo, Brazil
Tu-P94 Static potential `design' by microwave irradiation
T. Brandes , B. Kramer , M. Sassetti
Inst. Theor. Physik, Jungiusstr. 9, D-20355 Hamburg, Germany,
Tu-P95 SELF-CONSISTENT APPROACH OF THE ELECTRON LOCALIZATION IN SUPERLATTICES
J.L. ROBERT, A.B. GOUGAM, J. SICART and B. ETIENNE
Groupe d'Etude des Semiconducteurs, Universite Montpellier II 34095 France
Tu-P97 2D->2D MAGNETO-TUNNELING BETWEEN LONGITUDINAL X STATES IN GaAs/AlAs STRUCTURES AT HIGH PRESSURE
Hyunsik Im, J M Smith, P C Klipstein, R. Grey and G. Hill
Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU, UK
Tu-P98 ZERO-BIAS ANOMALY AT TUNNELING INTO 2D ACCUMULATION LAYER
G.M.Minkov, S.A.Negashev, O.E.Rut, A.V.Germanenko, E.V. Sukhorukov
Ural State University, Ekaterinburg 620083, Russia
Tu-P100 VERTICAL SCREENING IN DOPED SEMICONDUCTOR SUPERLATTICES WITH INTENTIONAL DISORDER
I.P. Zvyagin and M.A.Ormont
Faculty of Physics, Moscow State University, 119899, Moscow, Russia
Tu-P101 THE DOMAIN-LIKE STRUCTURE OF THE CURRENT DISTRIBUTION IN THE DOUBLE BARRIER STRUCTURES WITH RESONANT TUNNELING
M.N. Feiginov and V.A. Volkov
Institute of Radioengineering and Electronics Russian Academy of Sciences Mokhovaya st. 11, 103907 Moscow, Russia
Tu-P102 VERTICAL TRANSPORT AND CURRENT INSTABILITYES IN i-GaAs - i-AlAs - n-GaAs HETEROSTRUCTURE AT AUGER IONIZATION.
A.M. Belyantsev, Ju.Yu. Romanova, A.L. Korotkov
Institute for Physics of Microstructures of Russian Academy of Science, Russia
Tu-P103 RESONANT-TUNNELING SPECTROSCOPY OF IMPURITY STATES IN GaAs/AlAs HETEROSTRUCTERS
S.A. Vitusevich, A.F"orster, K. M.Indlekofer, H.L"uth; A.E.Belyaev, R.V.Konakova
Forschungszentrum J"ulich, Institut f"ur Schicht- und Ionentechnik D-52425 J"ulich , Germany
Tu-P104 SWITCHING DYNAMICS OF THE DOMAIN BOUNDARY IN WEAKLY COUPLED SUPERLATTICES
K. J. Luo, H. T. Grahn and K. H. Ploog
Paul-Drude-Institut f"ur FKE, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
AREA 5
Tu-P105 MAGNETOCAPACITANCE STUDY OF 2DES AT GaAs/AlGaAs HETEROJUNCTION AT FILLING FACTOR ONE
M.O. Dorokhova, S.I. Dorozhkin, R.J. Haug and K.Ploog
Institute of Solid State Physics RAS, Chernogolovka, Moscow distr., 142432 Russia.
Tu-P106 QUANTUM PHASE TRANSITION IN THE SKYRMION LATTICE
Yu.V. Nazarov and A.V. Khaetskii
Faculty of Applied Physics and DIMES, Delft University of Technology, 2628 CJ Delft, The Netherlands
Tu-P107 TOPOLOGICAL EXCITATIONS OF QUANTUM HALL FERROMAGNETS ARE BOUND SPIN WAVES
B. Paredes, J.H. Oaknin and C. Tejedor
Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid,Cantoblanco, 28049, Madrid, Spain.
Tu-P108 POLARISATION ANOMALIES AT FILLING FACTORS nu = 3, 5, AND 7 -- EVIDENCE FOR SKYRMIONS AT nu > 1?
G.C. Kerridge and A.S. Plaut, M.C. Holland and C.R. Stanley
Department of Physics, University of Exeter, Exeter EX4 4QL, UK
Tu-P110 EDGE MAGNETOPLASMONS: LANDAU-LEVEL STRUCTURE, REPULSION OF FUNDAMENTAL MODES$
O. G. Balev, N. Studart, and P. Vasilopoulos
Department of Physics, Concordia University, Canada
Tu-P111 OPTICAL DETECTION OF ACOUSTICAL PHONONS ABSORPTION BY 2D ELECTRONS IN A MAGNETIC FIELD.
V.E. Zhitomirskii, O.V. Volkov, I.V. Kukushkin, S. Roshko, W. Dietsche
Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Russia
Tu-P112 SCANNED PROBE MEASUREMENTS OF EDGE AND BULK CURRENTS IN A QUANTUM HALL CONDUCTOR
M.T. Woodside, K.L. McCormick, C. Vale, M. Wu and P.L. McEuen; C.I. Duruoz and J.S. Harris Jr.
Dept. of Physics, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720 USA.
AREA 6
Tu-P113 OPTICAL PROPERTIES OF SEMICONDUCTOR QUANTUM WIRES CRYSTALLIZED IN DIELECTRIC MATRIX
V.Dneprovskii, E.Mulyarov, S.Tikhodeev and E.Zhukov
Physics Faculty, Moscow State University, 119899 Moscow, Russia
Tu-P114 INVESTIGATION OF PHASE-SEPARATION PROCESSES BY EXCITON SPECTROSCOPY
M. Haselhoff and H.-J. Weber
Institut fur Physik, Universitat Dortmund, D-44221 Dortmund, Germany
Tu-P115 EMBEDDED W-DISCS AS NM-SCALE CAPACITORS
L.-E. Wernersson, A, Litwin, L. Montelius, H. Pettersson, L. Samuelson, and W. Seifert
Solid State Physics/ Nanometer Structure Consortium Lund University, Box 118, S-221 00 Lund, Sweden
Tu-P116 UNIFICATION OF EXACT AND STATISTICAL SELF-SIMILARITY IN SEMICONDUCTOR BILLIARDS
R.P.Taylor, A.P. Micolich, T.M. Fromhold, C.R. Tench, R. Newbury, J.P. Bird, and J. Cooper.
School of Physics, University of New South Wales, Sydney, 2052, Australia.
Tu-P117 FRANZ-KELDYSH OSCILLATIONS IN PUMP-PROBE SPECTRA OF InP SELF-ASSEMBLED QUANTUM DOTS
I. Ignat'ev, V. Davydov, H.-W. Ren, S. Sugou and Y. Masumoto
Single Quantum Dot Project, ERATO, JST, Tsukuba, Ibaraki 300-2635, Japan Opto-Electronics Research Lab., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
Tu-P118 EFFECT OF THE ANGULAR MOMENTUM ON THE MAGNITUDE OF THE CURRENT IN MAGNETO-TUNNELLING SPECTROSCOPY OF QUANTUM DOTS
B.Jouault, J.P.Holder, M.Boero, G.Faini, F.Laruelle, E.Bedel, A.K.Savchenko, J.C.Inkson
L2M-CNRS, 196 Avenue H. Rav\'era, BP107, 92225 Bagneux Cedex, France
Tu-P119 BALLISTIC QUANTUM TRANSPORT IN n-PbTe
G. Grabecki, J. Wrobel, T. Dietl, K. Byczuk, E. Papis, E. Kaminska, A.Piotrowska, G.Springholz, and G. Bauer
Institute of Physics, Polish Academy of Sciences, al.Lotnikow 32/46, PL-02668 Warszawa, Poland
Tu-P120 SATELLITE SPECTROSCOPY PERFORMED ON InAs SELF ASSEMBLED QUANTUM DOTS
P.O. Holtz, J.M. Garcia, S. Wongmanerod, and P.M. Petroff
Center for Quantized Electronic Structures (QUEST), University of California at Santa Barbara, Santa Barbara, CA 93106, USA
Tu-P121 SEPARATION of STRAIN and CONFINEMENT EFFECTS in the PHOTOLUMINESCENCE EXCITATION SPECTRA of InGaAs/AlGaAs V-GROOVE QUANTUM WIRES
E. Martinet, O. Stier, M. Grundmann, M.A. Dupertuis, A. Gustafsson, A. Rudra, F. Reinhardt and E. Kapon
Department of Physics, Swiss Federal Institute of Technology-EPFL, 1015 Lausanne, Switzerland
Tu-P122 Electron-Hole Pair Relaxation and Electronic Structure of CdS Small Quantum Dots
M. Dib, M. Chamarro, V. Voliotis, C. Gourdon, T. Gacoin, C. Delerue, G. Allan and M. Lannoo,
Groupe de Physique des Solides, CNRS, Universites Paris VI et VII, 2, place Jussieu, 75251 Paris cedex 05, France
Tu-P123 ELECTRONIC STRUCTURE OF SELF-ASSEMBLED InAs QUANTUM DOTS IN GaAs MATRIX
P.N. Brunkov , A.R. Kovsh, Yu.G. Musikhin, S.G. Konnikov, M. Henini, A. Polimeni, S.T.Stoddart, P.C.Main and L.Eaves
A.F. Ioffe Physico-Technical Institute, 194021, St.-Petersburg, Russia
Tu-P124 NON-MARKOVIAN BEHAVIORS OF PHASE RELAXATION OF CONFINED EXCIOTNS IN CuCl NANOCRYSTALS
A. Nakamura and H. Ohmura
Department of Crystalline Materials Science, Graduate School of Engineering and Center for Integrated Research in Science and Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
Tu-P125 SILICON AND GERMANIUM DOTS IN SILICON DIOXIDE LAYERS: OPTICAL AND EPR INVESTIGATION
V.A.Yukhimchuk, M.Ya. Valakh, P. L. F. Hemment, T. Komoda, V.Ya. Bratus.
Institute of Semiconductor Physics NASU, 45 pr. Nauky, 252028, Kiev, Ukraine,
Tu-P126 KONDO EFFECT IN QUANTUM DOTS WITH AC POTENTIALS
Rosa Lopez, Ramon Aguado, Gloria Platero and Carlos Tejedor
Instituto de Ciencia de Materiales (CSIC) Cantoblanco,28049 Madrid Spain.
Tu-P127 SELF-ORGANIZED GROWTH ON V-GROOVED SUBSTRATES
Frank Grosse and Roland Zimmermann
Institut fur Physik der Humboldt-Universitat zu Berlin, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Tu-P128 Surface phonon and visible photoluminescence in porous GaAs
K. Kuriyama, K. Ohbora, and K. Ushiyama 
College of Engineering and Research Center of Ion Beam Technology Hosei University, Koganei, Tokyo 184, Japan
Tu-P129 CONDUCTION BAND NON-PARABOLICITY IN GaAs QUANTUM WELLS INDUCED BYE EMBEDDED InAs QUANTUM DOTS
S. Cina, D.D. Arnone, H.P. Hughes , M. Pepper ,and D.A. Ritchie
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, U.K.
Tu-P130 SINGLE QUANTUM DOTS AND QUANTUM DOT SYSTEM
N.E.Kaputkina and Yu.E.Lozovik
Department of Theoretical Physics, Moscow Institute for Steel and Alloys, Leninskii prosp. 4, 117936 Moscow, Russia
Tu-P131 EXCITONS AND STORED CHARGE IN SELF-ORGANIZED INAS QUANTUM DOTS IN INP
H.Pettersson, R.J.Warburton, C.Bodefeld, J.P.Kotthaus, N.Carlsson, L.Landin, C.Pryor, M.-E.Pistol, W.Seifert, L.Samuelson
Sektion Physik, Ludwig-Maximilians University, Geschwister-Scholl-Platz1, D-80539 Munich, Germany
Tu-P132 THEORY OF THE ELECTRONIC AND OPTICAL PROPERTIES OF InAs-GaSb TYPE II QUANTUM DOTS
D. A. Broido and U. Rossler
Department of Physics, Boston College, Chestnut Hill, MA 02167, USA
Tu-P133 CAPACITANCE SPECTROSCOPY OF INAS QUANTUM DOTS USING P-I-N DIODES
A.E.Belyaev, L.Eaves, P.C.Main, S.T.Stoddart, A.Polimeni, M.Henini
Institute of Semiconductor Physics, NASU, Kiev, 252028, Ukraine
Tu-P135 COULOMB INTERACTION AND BISTABILITIES IN A QUANTUM DOT
Enrique V. Anda, Eduardo Soares* and Guillermo Chiappe
Pontifi cia Universidade Catolica do Rio de Janeiro 22453-900 Rio de Janeiro RJ, Brazil
Tu-P136 Strongly Polarized Photoluminescence from InAs Quantum Wires on Vicinal (110) Surfaces
Satoshi Torii, Byoung-Rho Shim, Takeshi Ota, Keisuke Kobayashi and Hisao Nakashima
The Institute of Scientific and Industrial Research Osaka University 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan
Tu-P137 THE ABSORPTION OF SURFACE ACOUSTIC WAVES BY AN ARRAY OF QUANTUM WIRES
Michal Rokni and Y. Levinson
The Weizmann Institute of Science, Rehovot, 76100, Israel
Tu-P138 PHOTOLUMINESCENCE OF InAs QUANTUM DOTS GROWN BY SMEE ON GaAs MISORIENTED SURFACES
R.B.Juferev, A.B.Novikov, B.V.Novikov, S.Yu.Verbin, Dinh Son Thach, I.Shur, G.Gobsch, R.Goldhahn, N.Stein, A.Golombek, G.E.Cirlin, V.G.Dubrovskii and V.N.Petrov
Institute of Physics, St.Petersburg University, 198904 StPetersburg Russia
Tu-P139 T-DEPENDENT ELECTRICAL CONDUCTIVITY AS A PROBE OF THE LATERAL POTENTIAL IN GaAs/AlAs COUPLED QWR's
P. Denk, F. Petit, A. Cavanna, T. Melin and B. Etienne
Laboratoire de Microstructures et de Microelectronique (L2M-CNRS),B.P. 107, 92 225 BAGNEUX cedex, FRANCE.
Tu-P140 LONG-TERM OSCILLATIONS OF THE INTENSITY OF VISIBLE PHOTOLUMINESCENCE BAND IN POROUS SILICON
A.M. Monakhov, V.I. Stepanov, N.I. Sablina, N.N. Smirnova
Ioffe Physical-Technical Institute, St.Petersburg, 194021, Russia
Tu-P141 MESOSCOPIC RECTIFIER
K. Nikolic and R. V. Sordan
Faculty of Electrical Engineering, University of Belgrade,P.O.\ Box 3554, 11000 Belgrade, Yugoslavia.
Tu-P142 LOW TEMPERATURE TRANSPORT PROPERTIES OF InAs/GaAs STRUCTURES WITH QUANTUM DOT LAYERS
V.A. Kulbachinskii, V.G. Kytin, R.A. Lunin, A.V. Golikov, A.V. Demin, I.G. Malkina, B.N. Zvonkov and Yu.N. Safyanov
Low Temperature Physics Department, Moscow State University, 119899, Moscow, Russia
Tu-P143 COULOMB CORRELATION IN THE ADDITION SPECTRA OF SINGLE AND COUPLED QUANTUM DOTS
Massimo Rontani, Fausto Rossi, Franca Manghi and Elisa Molinari
Istituto Nazionale per la Fisica della Materia (INFM), and Dipartimento di Fisica, Universita di Modena, I-41100 Modena, Italy
Tu-P144 QUANTUM INTERFERENCES IN CORRUGATED CONDUCTING WIRES
KyoungWan Park, Seongjae Lee, Mincheol Shin, Jong Seol Yuk, and El-Hang Lee
Research Department, ETRI, Yusong P.O.Box 106, Taejon 305 - 600, Korea
Tu-P145 SPATIALLY RESOLVED PHOTOLUMINESCENCE SPECTRA OF CdTe QUANTUM DOTS
Shun'ichi Matsushita and Fujio Minami, Yoshikazu Terai, Shinji Kuroda and Koki Takita
Department of Applied Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, Japan
Tu-P146 METASTABLE POPULATION OF InAs/GaAs STATE IN SELF ASSEMBLED QUANTUM DOTS
M.M.Sobolev, A.R.Kovsh, V.M.Ustinov , A.Yu. Egorov, A.E. Zhukov Yu.G. Musikhin.
A.F.Ioffe Physical Technical Institute, 26 Polytechnicheskaya ul.,194021 St. Petersburg, Russia
Tu-P147 STARK OPTICAL TRANSITIONS IN BIDIMENSIONAL ARRAYS OF QUANTUM DOTS.
Z. Barticevic, J. Tutor, M. Pacheco
Division de Ciencias Naturales yasicas, Agencia de Ciencia y Tecnologa, Calle 20, No. 4103 e/18A y 47, Alturas de Miramar, Playa. Ciudad Habana, Cuba
Tu-P148 SCREENING OF DONORS IN THE CONFINED ELECTRON GAS: SCANNING TUNNELING SPECTROSCOPY AS A LOCAL PROBE
M.Wenderoth, M.A.Rosentreter, K.Engel, A.J.Heinrich, R.G.Ulbrich
4.Physikalisches Institut der Universitdt Gvttingen,Bunsenstr.13, D-37073 Gvttingen, Germany
Tu-P149 BRAGG REFLECTIONS IN A TOMONAGA-LUTTINGER LIQUID
Yasuhiro Tokura, A. A. Odintsov, and S. Tarucha
NTT Basic Research Laboratories, Kanagawa JAPAN
Tu-P150 INTERMIXING INDUCED CHANGES IN THE RADIATIVE RECOMBINATION FROM RED AND INFRARED EMITTING III-V QUANTUM DOTS
C. Lobo and R. Leon,S. Fafard and P.G. Piva
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200 Australia
Tu-P151 BAND STRUCTURE AND EXCITON ENERGIES IN SILICON NANOCRYSTALS
M. Ben-Chorin, B. Averboukh, D. Kovalev, A. Kux, G. Polisski, and F. Koch
1. Weizmann Institute of Science, Department of Chemical Physics, Rehovot 76100, Israel
Tu-P152 ANISOTROPY INDUCED FORBIDDEN OPTICAL TRANSITIONS IN PbSe AND PbS SPHERICAL QUANTUM DOTS
A. D. Andreev, A.A. Lipovskii, V.D. Petrikov
St.-Petersburg State Technical University, Polytechnicheskaja 29, St.-Petersburg, 195251 Russia
Tu-P153 Photoluminescence of silicon nanocrystallites in a weak confinement regime
G. Polisski, H. Heckler, D. Kovalev, F. Koch
Technische Universitat Munchen, 85747 Garching, Germany
Tu-P154 GIANT OPTICAL NONLINEARITY OF HETEROSTRUCTURES WITH InP SELF-ASSEMBLED QUANTUM DOTS
V. Davydov, I. Ignatev, H.W. Ren, S. Sugou and Y. Masumoto
Single Quantum Dot Project, ERATO, JST, Tsukuba, Ibaraki 300-2635, Japan Opto-Electronics Research Lab., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
TuP-154a POLARIZED AND TIME-RESOLVED CATHODOLUMINESCENCE STUDIES OF SELECTIVELY GROWN NOVEL SELF-ASSEMBLED InAs/GaAs QUANTUM DOTS
D. H. Rich, Y. Tang, A. Konkar, I. Mukhametzhanov, P. Chen, and A. Madhukar
Photonic Materials and Devices Laboratory, Department of Materials Science \& Engineering University of Southern California, Los Angeles, CA 90089-0241
AREA 7
Tu-P155 ENERGY RELAXATION BETWEEN QUANTUM LEVELS AND 3d-MULTIPLET STATES IN BARRIERS OF CdMnTe/CdTe QUANTUM WELLSJ.
Nakahara, K. Ando, K. Takamura and S. Yamamoto
Division of Physics, Hokkaido University, N10W8 Sapporo 060-0810, JapanElectrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-0045, Japan
Tu-P156 Shallow acceptors in strained Ge/GeSi quantum well heterostructures
V.Ya. Aleshkin, V.I Gavrilenko, I.V. Erofeeva, D.V. Kozlov, O.A. Kuzetsov and M.D.Moldavskaya.
Institute for Physics of Microstructures RAS,603600 N.Novgorod, GSP-105, Russia
Tu-P157 Efficient photoluminescence from a-Si:H film prepared by reactive RF sputtering
I. Umezu, T. Murota, M. Kawata, K. Yoshida and A. Sugimura
Department of Applied Physics, Konan University, Kobe, 658-8501, Japan
Tu-P158 STRUCTURAL DEFECTS AND PHOTOLUMINESCENCE IN RARE EARTH ELEMENT-IMPLANTED SILICON ANNEALED AT HIGH TEMPERATURE
Vladimir I.Vdovin, Nikolai A.Sobolev, Aleksey M.Emel`yanov, Elena I.Shek,Tatiana G.Yugova
Institute for Chemical Problems of Microelectronics, Moscow 109017, Russia
Tu-P159 ELECTRONIC STRUCTURE AND STABILITY OF NATIVE DEFECTS IN CUBIC BORON NITRIDE
J. L. P. Castineira, J. R. Leite, J. L. F. da Silva, L. M. R. Scolfaro
Universidade Federal de Uberlandia, CP 593, CEP 38400-902 Uberlandia, MG, Brazil
Tu-P160 RESONANT STATES IN STRAINED SEMICONDUCTORS AND INTRACENTER FAR-INFRARED STIMULATED EMISSION
M.A.Odnoblyudov, V.M.Chistyakov and I.N.Yassievich, I.V.Altukhov and M.S.Kagan
A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences,Politekhnicheskaya 26, St.Petersburg, 194021, Russia
Tu-P161 Defects in heavily Si-doped GaAs/Si-delta/AlAs Heterostructure
T. M. Schmidt, R. H. Miwa
Departamento de Ciencias F'isicas, Universidade Federal de Uberlandia, C.P. 593, 38400-902,Uberlandia, MG, Brazil
Tu-P162 NEW LOCAL VIBRATIONAL MODES OF THE INTERSTITIAL OXYGEN IN SILICON
L. I. Murin, T. Hallberg, V. P. Markevich, and J. L. Lindstr
Institute of Solid State and Semiconductor Physics, National Academy of Sciences, Minsk 220072, BELARUS
Tu-P163 RADIATION HARDNESS OF OXYGEN ENRICHED SILICON DETECTORS
A. Ruzin, G. Casse, F. Lemeilleur, M. Glaser
CERN, EP Division, CH-1211 Geneva, Switzerland
Tu-P164 BINDING ENERGIES OF DONORS IN QUANTUM DOTS IN THE PRESENCE OF A MAGNETIC FIELD
M. Pacheco, A. Le'on and Z. Barticevic
Departamento de F'isica, Universidad de Santiago de Chile, Casilla 307, Santiago, Chile
Tu-P166 DISLOCATION MECHANISMS OF LATTICE-IMPURITY PHASE INTERACTION IN SOLIDS AT LOW AND HIGH TEMPERATURES
Valery P. Kisel
Institute of Solid State Physics,142432 Chernogolovka, Moscow , Russia
Tu-P167 ELECTRONIC AND STRUCTURAL PROPERTIES OF SILICON NITRIDE MATERIALS
F. de Brito Mota, J. F. Justo and A. Fazzio
Instituto de F'isica da Universidade de Sao Paulo,CP 66318, CEP 05315-970 Sao Paulo - SP, Brazil
Tu-P168 LOW-TEMPERATURE CARRIER EMISSION FROM A RADIATION-INDUCED DEFECT IN n-GaAs.
W.E. Meyer, F.D. Auret and S.A. Goodman
Physics Department, University of Pretoria, Pretoria, 0002, South-Africa
Tu-P169 ANALYTICAL EXPRESSIONS FOR THE PHENOMENON OF THE THERMAL QUENCHING OF THE PHOTOCONDUCTIVITY IN SEMICONDUCTORS.
R. Rapaport and I. Balberg
Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
Tu-P170 INTERSTITIAL-RELATED REACTIONS IN IRRADIATED SILICON
Kh.A. Abdullin, Yu.V. Gorelkinskii and B.N. Mukashev
Institute of Physics and Technology Ministry of Science-Academy of Sciences of the RK, 480082 Almaty, Kazakstan
Tu-P171 Si INCORPORATION IN InAlAs GROWN BY LP-MOVPE ASSESSED BY OPTICAL AND TRANSPORT TECHNIQUES
Patricia L. Souza, Christiana V.-B. Tribuzy and Boris Yavich
Centro de Estudos em Telecomunicacoes, Pontificia Universidade Catolica do Rio de Janeiro, Rua Marques de São Vicente 225, 22453-900, Rio de Janeiro Brasil
Tu-P172 {111} PLATELETS IN HYDROGEN PLASMA-EXPOSED GaAs
Johannes R. Botha
Physics Department, University of Port Elizabeth, PO Box 1600, Port Elizabeth, 6000, South-Africa
Tu-P173 MODEL CALCULATION OF THE PHOTOLUMINESCENCE LINESHAPE OF ELECTRON TO ACCEPTOR-IMPURITY RECOMBINATION IN GaAs QUANTUM-WIRE MICROCRYSTALS
C. A. Duque, N. Porras-Montenegro, A. Latg and L. E. Oliveira
Inst. de F'i sica, Universidade Federal Fluminense, Niter'oi-RJ, 24210-340, Brazil
AREA 8
Tu-P174 SPECTROSCOPIC CHARACTERIZATION OF ER3+ IONS IN 6H SIC
A. Kozanecki, W. Jantsch, M, Stephikova, S. Lanzerstorfer, A. Henry, and J. P. Bergman
Institute of Physics, PAS, 02-668 Warsaw, Poland
Tu-P175 ACTIVATION OF P+ AND N+ IONS IN EPITAXIAL N-TYPE 4H-SiC IMPLANTED AT HIGH TEMPERATURE (500 oC)
Michael B. Scott, Yung Kee Yeo, and Robert L. Hengehold
Air Force Institute of Technology, Wright-Patterson AFB OH 45433 USA
Tu-P176 NITROGEN AND CARBON-VACANCY DIRECT EXCHANGE MECHANISM FOR THE DIFFUSION OF NITROGEN IN DIAMOND STUDIED BY ab initio MOLECULAR DYNAMICS SIMULATION
Y. Motoshiromizu, Takeshi Nishimatsu a, Hiroshi Katayama-Yoshida a b and Nozomi Orit
Department of Condensed Matter Physics, The Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka University, 8-1 Mihogaoka, Ibaraki-shi, Osaka 567--0047, JAPAN
Tu-P177 INVESTIGATION OF CARRIER DYNAMICS IN 4H-SIC
A. Galeckas, J. Linnros, and V. Grivickas, U. Lindefelt, C. Hallin
Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm, Sweden,
Tu-P178 SECOND-HARMONIC GENERATION IN SILICON CARBIDE POLYTYPES: INFLUENCE OF CRYSTAL STRUCTURE AND MANY-BODY EFFECTS
B. Adolph and F.Bechstedt
Institut fur Festkorpertheorie und Theoretische Optik, Universitat Jena, Max-Wien-Platz 1, 07743 Jena, Germany
Tu-P179 LOW FREQUENCY NOISE IN GaN/GaAlN HETEROSTRUCTURES
M.E. Levinshtein , S. L. Rumyantsev , Remis Gaska , Jinwei W. Yang and Michael S. Shur
Solid State Electronics Division, The Ioffe Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russia
AREA 9
Tu-P180 HIGH FREQUENCY OPTICAL RECTIFICATION IN ASYMMETRICALLY DOPED QUANTUM WELLS
S. Graf, H. Sigg, K.K\"ohler, W. B\"achtold
Paul Scherrer Institute, CH-5232 Villigen--PSI, Switzerland
Tu-P181 AVALANCHING LIGHT-EMITTING Si:Er:O STRUCTURES FOR PHOTONIC APPLICATIONS
Nikolai A.Sobolev, Yuri A.Nikolaev, Aleksey M.Emel`yanov, Andrey N.Yakimenko, Pavel E.Khakuashev and Mikhail A.Trishenkov
Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
Tu-P182 THE IMPACT OF PHOTON LOCALISATION UPON THE LIGHT EMISSION FROM SEMICONDUCTOR-OPAL PHOTONIC CRYSTALS
S.G. Romanov, H.M. Yates , M.E. Pemble , N.P. Johnson , R.M. De La Rue
Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
Tu-P183 THE NEW BALLISTIC FIELD EFFECT TRANSISTORS - ANALOGS OF DIFFUSER AND CONFUSER IN HYDRODYNAMICS
M.V.Cheremisin, and G.G.Samsonidze
A.F.Ioffe Physical-Technical Institute, St.Petersburg, Russia
Tu-P184 CuxCd1-xTe: A NOVEL SEMICONDUCTOR ALLOY
S. Lopez-Lopez, S. Jimnez-Sandoval, B.S. Chao+ and M.Melndez-Lira
Departamento de Fisica, Centro de Investigaci¢n y de Estudios Avanzados del IPN, Apartado Postal 14-740, Mxico, D.F. 07000, Mxico
Tu-P185 USE OF BISTABLE CENTERS IN SEMICONDUCTORS FOR HOLOGRAPHIC RECORDING
A. Suchocki, B. Koziarska-Glinka, T. Wojtowicz, I. Miotkowski and J.M. Langer,
Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
Tu-P187 SUPERLATTICES OF ARSENIC CLUSTERS IN LOW-TEMPERATURE GROWN GaAs
V.V.Chaldyshev, N.N.Faleev, N.A.Bert, Yu.G.Musikhin, A.E.Kunitsyn,V.V.Preobrazhenskii, M.A.Putyato, B.R.Semyagin, and P.Werner
Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia,
Tu-P188 DYNAMICAL RESPONSE IN AN ARRAY OF QUANTUM-DOT CELLS
C.-K. Wang, I. Yakymenko, I. V. Zozoulenko, and K.-F. Berggren
Department of Physics and Measurement Technology,Link\"{o}ping University, S--581\,83 Link\"{o}ping, Sweden
Tu-P189 ELECTRONIC AND OPTICAL PROPERTIES OF MANGANESE-DOPED NANOCRYSTALS
V. Albe, J.P. Albert, C. Jouanin and D. Bertho
Universit\'{e} Montpellier II, Groupe d'Etude des semiconducteurs {\normalsize CC074, Place Eug\`{e}ne Bataillon, 34095 Montpellier Cedex 05, France
Tu-P190 SPATIAL HOLE BURNING IN QUANTUM DOT LASERS
L.V. Asryan and R.A. Suris
Ioffe Physico-Technical Institute, St Petersburg 194021, Russia
Tu-P192 FAST NONRADIATIVE ENERGY TRANSFER IN ORGANIC-INORGANIC NANOSTRUCTURES
D. Basko, G.C. La Rocca, F. Bassani and V.M. Agranovich
Scuola Normale Superiore and INFM, Pisa, 56126, Italy
Tu-P193 SUPERRADIANT INSTABILITY IN CONTINUOUSLY PUMPED LOW-DIMENSIONAL HETEROSTRUCTURES:\\ A NEW SOURCE OF FEMTOSECOND PULSES
A.A. Belyanin, V.V. Kocharovsky, Vl.V. Kocharovsky and N.G. Kalugin
Institute of Applied Physics, Russian Academy of Science,46 Ulyanov Street, 603600 Nizhny Novgorod, Russia
Tu-P194 SIZE DEPENDENT ABSORPTION SPECTRA OF Si NANOCRYSTALLITES FORMED IN a-Si MATRIX
Xinwei Zhao, Shuji Komuro, Shintaro Nomura, Yoshinobu Aoyagi and Takuo Sugano
Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
Tu-P195 NOVEL ELECTRONIC PROPERTIES OF NANOGRAPHITE, HYPERGRAPHITE AND TOPOLOGICAL DEFECTS
M. Fujita, Y. Takagi, M. Igami, K. Wakabayashi and K. Kusakabe
Institute of Materials Science, University of Tsukuba, Tsukuba 305-8573, Japan
Tu-P197 X-RAY DIFRACTION, X-RAY PHOTOELECTRON AND VIBRATIONAL SPECTROSCOPIC STUDIES OF NANOCLUSTER CARBON OBTAINED FROM 6H-SiC
A.M. Danishevskii, S.K. Gordeev,A.V. Grechinskaya,E.A. Smorgonskaya, V.B. Shuman, A.V. Schukarev,M.A. Yagovkina
Ioffe Physical-Technical Institute RAS, 194021 St. Petersburg, Russia
Tu-P198 OPTICALLY ACTIVE ORGANOMETALLIC THIN FILMS FOR DEVICE APPLICATIONS
C. G. Gameiro, P. A. Santa-Cruz, G. F. de S\'a and E. F. da Silva Jr.
Departamento de Qu\'\i mica Fundamental,Universidade Federal de Pernambuco,Recife, PE 50670-901, Brazil
Tu-P199 VISIBLE LIGHT CONTROL BY GaN PHOTONIC BAND GAPS
A. Barra, D. Cassagne, and C. Jouanin
Universite de Montpellier II, Groupe d'Etude des Semiconducteurs,CC074, Place Eug\`{e}ne Bataillon, 34095 Montpellier Cedex 05, France
Tu-P200 NOVEL CARBON SEMICONDUCTING MATERIALS PREPARED FROM FULLERITE C60 AND CARBYNE 
A.G. Lyapin, V.V. Brazhkin, S.G. Lyapin, S.V. Popova, T.D. Varfolomeeva, and R.N. Voloshin
Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow region, 142092 , Russia
AREA 10
Tu-P201 PROPERTIES OF GaInP/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURES: INFLUENCE OF GaInP ORDERING
Y.S. Huang, W.D. Sun and Fred H. Pollak, J.L. Freeouf, I.D. Calder and R.E. Mallard
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications Brooklyn College of the City University of New York Brooklyn, NY 11210 USA
Tu-P202 INFRARED DETECTOR FOR LOW PHOTON BACKGROUND APPLICATIONS
M. Patrashin, M. Fujiwara, N. Hiromoto, and B. Fouks
Communications Research Laboratory, 4-2-1, Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
Tu-P203 PROPERTIES OF GaAs/AlGaAs HETEROJUNCTIONS AS INFRARED DETECTORS
S. Avsmontas, Z. Dashevsky ,J. Gradauskas, D. Seliuta, A. Su\v{z}ied\.{e}lis, A. \v{S}il\.{e}nas and G. Valu\v{s}is
Ben-Gurion University of the Negev, Materials Engineering Dept., Beer-Sheva, 84105 Israel
Tu-P204 OPTIMIZED GRATING FOR AN N-TYPE GaAs/GaAlAs QUANTUM WELL INFRARED PHOTODETECTOR
Shmuel I. Borenstain, U. Arad, I. Lyubina, A. Segal, and Y. Warschawer
Jerusalem College of Technology, Jerusalem 91160, Israel.
Tu-P205 Surface Photovoltage Spectroscopy of GaAs/AlGaAs Heterojunction Bipolar Transistor
Boris Mishori, Mark Leibovitch , Fred H. Pollak , Dwight C. Streit , Michael Wojtowicz , Yoram Shapira
1. Department of Physical Electronics, Tel-Aviv University, Tel-Aviv 69978 Israel
Tu-P206 THE SILICON WITH ULTRA LOW DIELECTRIC LOSSES FOR THE HIGH-POWER GYROTRON WINDOWS.
B.A. Andreev, A.V. Gusev, R. Heidinger, T.V. Kotereva, V.V. Parshin, and V.B. Shmagin
Institute for Physics of Microstructures RAS, N.Novgorod, Russia
Tu-P207 THE NEW CONCEPT OF SEMI-INSULATING CdTe FOR NON-COOLED SPECTROMETRIC GAMMA-RAY SENSORS
P.N.Tkachuk,V.I.Tkachuk,N.D,Raransky,N.D.Korbutjak,D.V.Korbutjaka,S.G.Krylyuka
Chernivtsi State University,Dept.of Solid State Physics,2,Kotsjubinsky str.,274012,Chernivtsi,Ukraine